Search results for: how-transistors-work

How Transistors Work

Author : James Roland
File Size : 33.64 MB
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Did you know that electric current can be controlled? Have you ever wondered how that might be done? Transistors can act as amplifiers, taking in a small current and sending out a larger one, or as switches, turning electric current on and off. But how do these different transistors work? How are they used in our electronic devices? Discover the history of how transistors were developed, explore how different types of transistors can play different roles in electronics, and learn where transistors may be taking technology in the future!

Transistors

Author : Mikhail Efimovich Levinshte?n
File Size : 78.13 MB
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This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices ? the transistors.The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well.The book consists of 3 parts: Part I: The section on semiconductors describes the main properties of semiconductors, explains the difference between the semiconductors, metals and dielectrics. We find here the explanation of the appearance of those wonderful properties of semiconductors which underlie their numerous applications. This part also contains a vivid and detailed description of the main types of motion of the charge carriers in semiconductors: thermal motion, motion in the electric field and diffusion.Part II covers Barriers and Junctions. In order to understand the principles of the work of the most important semiconductor devices, it is not sufficient just to get to know the properties of semiconductors. It is also quite essential to study certain specific and interesting phenomena ? the so-called junctions. This part of the book contains a detailed and vivid description of those properties and in that view of the properties of the p-n junctions and diodes: photodiodes, varicaps, light emitting diodes, solar cells and rectifier diodes.Part III covers Transitors. It describes the basis of the work of the Bipolar and Field Effect Transistors. Without making use of rather complicated equations or notions of quantum mechanics the authors give a clear and simple explanation of the cause of ability of those devices to amplify and generate electric signals. They tell the readers how transistors are manufactured and describe the work of the transistor's simplest circuits.The last chapter of the book is devoted to the ideas underlying the transistors: integrated circuits. It is these integrated circuits which are the foundation of modern electronics: from telephone apparatus to supercomputers, from medical instruments to cosmic communication systems.In conclusion, the authors make an attempt to foresee and imagine, together with the reader what other devices may come to substitute the transistor in the future.

Starting Electronics

Author : Keith Brindley
File Size : 29.64 MB
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Starting Electronics is a nine-chapter introductory text to electronics based on feature articles previously published as magazine articles. The opening chapter provides an overview of the fundamentals of electronics. The succeeding chapters present details of some easy-to-do experiments and the current and voltage measurement. The remaining chapters cover some basic components of electronics, including capacitor, integrated circuit, oscillator, filter, diodes, and transistors. This book will prove useful to electronic constructors and students.

Basic Electrical Engineering

Author : Ritu Sahdev
File Size : 79.96 MB
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Although, a number of books, written by various authors on the subject are available in the market. However, the author feels that this book will facilitate the students not only to prepare for the regular University examinations. The book is also quite suitable for the professionals since many live examples have been incorporated. The book has the following exclusive features: (i) The Learning objectives of each chapter have been incorporated in the beginning to develop curiosity among the students. (ii) Practice exercise have been added in all the chapters after suitable intervals to impart necessary practice. (iii) At the end of each chapter, its summary highlights are given. This will enable the students to revise the subject matter quickly. (iv) A number of short answer and test questions have been given at the end of each chapter. While answering these questions, the readers will have to think deep into the subject matter. This will improve their analytical approach. Consequently, the students/readers will be in position to respond in a better way while appearing before the selection board or to deal with practical problems. (v) A sufficient number of objective type questions (MCQ) have been given at the end of each chapter. These questions will help the students to perform better in the competitive examinations. (vi) The subject matter is treated in a simple and lucid manner so that an average student can understand the subject easily. Although, typical mathematical expressions are avoided but simple mathematical relations are used for better explanation and understanding.

Handbook for III V High Electron Mobility Transistor Technologies

Author : D. Nirmal
File Size : 45.73 MB
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This book focusses on III-V high electron mobility transistors (HEMTs) including basic physics, material used, fabrications details, modeling, simulation, and other important aspects. It initiates by describing principle of operation, material systems and material technologies followed by description of the structure, I-V characteristics, modeling of DC and RF parameters of AlGaN/GaN HEMTs. The book also provides information about source/drain engineering, gate engineering and channel engineering techniques used to improve the DC-RF and breakdown performance of HEMTs. Finally, the book also highlights the importance of metal oxide semiconductor high electron mobility transistors (MOS-HEMT). Key Features Combines III-As/P/N HEMTs with reliability and current status in single volume Includes AC/DC modelling and (sub)millimeter wave devices with reliability analysis Covers all theoretical and experimental aspects of HEMTs Discusses AlGaN/GaN transistors Presents DC, RF and breakdown characteristics of HEMTs on various material systems using graphs and plots

To the Digital Age

Author : Ross Knox Bassett
File Size : 23.3 MB
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"The definitive history of how the transistor was transformed from an analog into a truly digital device." -- IEEE Spectrum

Growing Up with Science

Author :
File Size : 21.44 MB
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Volume fifteen of a seventeen-volume, alphabetically-arranged encyclopedia contains approximately five hundred articles introducing key aspects of science and technology.

Matching Properties of Deep Sub Micron MOS Transistors

Author : Jeroen A. Croon
File Size : 62.17 MB
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Matching Properties of Deep Sub-Micron MOS Transistors examines this interesting phenomenon. Microscopic fluctuations cause stochastic parameter fluctuations that affect the accuracy of the MOSFET. For analog circuits this determines the trade-off between speed, power, accuracy and yield. Furthermore, due to the down-scaling of device dimensions, transistor mismatch has an increasing impact on digital circuits. The matching properties of MOSFETs are studied at several levels of abstraction: A simple and physics-based model is presented that accurately describes the mismatch in the drain current. The model is illustrated by dimensioning the unit current cell of a current-steering D/A converter. The most commonly used methods to extract the matching properties of a technology are bench-marked with respect to model accuracy, measurement accuracy and speed, and physical contents of the extracted parameters. The physical origins of microscopic fluctuations and how they affect MOSFET operation are investigated. This leads to a refinement of the generally applied 1/area law. In addition, the analysis of simple transistor models highlights the physical mechanisms that dominate the fluctuations in the drain current and transconductance. The impact of process parameters on the matching properties is discussed. The impact of gate line-edge roughness is investigated, which is considered to be one of the roadblocks to the further down-scaling of the MOS transistor. Matching Properties of Deep Sub-Micron MOS Transistors is aimed at device physicists, characterization engineers, technology designers, circuit designers, or anybody else interested in the stochastic properties of the MOSFET.

Official Gazette of the United States Patent Office

Author : United States. Patent Office
File Size : 67.68 MB
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Hybrid Electric Vehicle System Modeling and Control

Author : Wei Liu
File Size : 72.62 MB
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This new edition includes approximately 30% new materials covering the following information that has been added to this important work: extends the contents on Li-ion batteries detailing the positive and negative electrodes and characteristics and other components including binder, electrolyte, separator and foils, and the structure of Li-ion battery cell. Nickel-cadmium batteries are deleted. adds a new section presenting the modelling of multi-mode electrically variable transmission, which gradually became the main structure of the hybrid power-train during the last 5 years. newly added chapter on noise and vibration of hybrid vehicles introduces the basics of vibration and noise issues associated with power-train, driveline and vehicle vibrations, and addresses control solutions to reduce the noise and vibration levels. Chapter 10 (chapter 9 of the first edition) is extended by presenting EPA and UN newly required test drive schedules and test procedures for hybrid electric mileage calculation for window sticker considerations. In addition to the above major changes in this second edition, adaptive charging sustaining point determination method is presented to have a plug-in hybrid electric vehicle with optimum performance.